TechnicalTenderSpecification_ENAS-11.1.3_PR1212932.xlsx

Wafer-Burn-in-Test für Halbleiterscheiben

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LEISTUNGSVERZEICHNIS

Unnamed: 0LEISTUNGSVERZEICHNIS /  Tender SpecificationUnnamed: 2Unnamed: 3Unnamed: 4Unnamed: 5Stand: 25.03.2026Unnamed: 7Unnamed: 8
Banf-Nummer/order request no.:PR 1212932
Anzahl/quantity:1 Stück / 1 pieces
Gerätesteckbriefnummer/device profile no:ENAS-11-1-c
Auftragsgegenstand/order subject:Wafer Burn In Test
KURZE BESCHREIBUNG DER LEISTUNG/ BRIEF SERVICE DESCRIPTION:
The specification describes the requirements of a semiconductor test system to be used for characterization and burn in test of SiC and GaN wafer technology. The system must enable high parallel stress testing directly on wafers under defined bias and temperature conditions. The system must be able to perform burn in techniques such as HTRB, HTGB and functional burn in for proper characterization of latent defects and failure mechanisms. The system must enable full data traceability per die and have proper integration systems for reliable testing.
Legende Kriterien/legend criteria
BBewertung: Leistungsverzeichnispositionen, die mit einem B gekennzeichnet sind, dienen der Bewertung einzelner Kriterien. Die maximal erreichbare Punktzahl für das einzelne Kriterium ist in Spalte G aufgelistet. Eine Nichterfüllung oder keine Angaben führen zum sofortigen Ausschluss. Evaluation: The positions of service specification marked with B are used to evaluate individual criteria. The maximum achievable score for each criterion is listed in column J. Non-compliance or no information will result in immediate exclusion.
FForderung: Leistungsverzeichnispositionen, die mit einem F gekennzeichnet sind, müssen zwingend erfüllt werden. Das bedeutet für den Bieter, dass im Angebot dazu Angaben zu erstellen sind. Eine Nichterfüllung oder keine Angaben führen zum sofortigen Ausschluss. Requirement: The positions of service specification marked with F must be fulfilled. The information must be provided in the offer. Non-compliance or no information will result in immediate exclusion.
OOption: Leistungsverzeichnispositionen, die mit einem O gekennzeichnet sind, dienen ebenfalls der Bewertung einzelner Kriterien. Die maximal erreichbare Punktzahl für das einzelne Kriterium ist in Spalte G aufgelistet. Optionen nicht anzubieten, führt jedoch nicht zum Ausschluss. Eine nicht angebotene Option wird mit 0 Punkten bewertet. Option: Specification items marked with an “O” are also used to evaluate individual criteria. The maximum number of points available for each criterion is listed in column G. However, failure to offer an option does not result in disqualification. An option that is not offered is awarded 0 points.
IInformation: Leistungsverzeichnispositionen, die mit einem I gekennzeichnet sind, fließen nicht in die Wertung ein. Diese dienen der Übermittlung von Informationen. Diese Positionen müssen zwingend beachtet werden. Sie führen nicht zum Ausschluss. Information: The positions of service specification marked with I are not included in the evaluation. They are used for the transmission of information, which must be observed and do not result in exclusion.
NNachhaltigkeit: Leistungsverzeichnispositionen, die mit einem N gekennzeichnet sind, dienen der Bewertung der Nachhaltigkeit als eigenes Zuschlagskriterium. Eine Nichterfüllung oder keine Angaben führen zum sofortigen Ausschluss. Sustainability: The positions of service specification marked with an N are used to assess sustainability as an award criteria. Non-compliance or no information will result in immediate exclusion.
LV Pos. / TS Pos.TECHNISCHE BESCHREIBUNG - Hauptpunkt Technical description -  main topicTECHNISCHE BESCHREIBUNG - Beschreibung Technical description -  specificationAnforderungen an die jeweiligen Parameter What is needed - parameterB/F/O/I/Nmax. Punktzahl B/O-Kriterien max. total points B / O-criteriavom Bieter auszufüllen / to be filled by tendererVerweis in Bieterdokument / Reference in tenderer document
1.1General System RequirementsWafer level Burn in and reliability test system for SiC and GaN Power Devices on Wafer levelF
1.2General System RequirementsFunctional Burn In TestHigh Temperature Gate Bias (HTGB) & High Temperature Reverse Bias (HTRB) Test CapabilityF
1.3General System RequirementsOperating Temperature RangeContinous operation from Ambient(25°C) to 150°C, higher capability will get more pointsB5
2.1Wafer Testing RequirementsMulti Wafer CapabilityCapability to stress at least one wafer/chuck 4 Points to be given if supplier can test more than 1 chuck.B2
2.2Wafer Testing RequirementsWafer Size Compatibilityat least 200 mm wafer, more wafer sizes (100, 150 and /or 300 mm) rated betterB6
2.3Wafer Testing RequirementsDevice TechnologiesSystem must be suitable for testing SiC and GaN component technology.F
2.4Wafer Testing RequirementsTypes of DUTFull wafer testing via a probecard/contactor.F
2.5Wafer Testing RequirementsDUT FlexibilityPoints to be awarded if the system can test dies and modules in addition to the wafer capabilityB8
3.1Electrical Testing Capability (HTGB)Maximum Number of Dies to be tested in parallel for Gate Stress Test per waferAtleast 1000, more will be better ratedB9
3.2Electrical Testing Capability (HTGB)Min Voltage of Gate Voltage Power Supply for Gate StressAtleast -15 V, lesser will be better ratedB9
3.3Electrical Testing Capability (HTGB)Max Voltage of Gate Voltage Power Supply for Gate StressAtleast 30 V , more will be better ratedB9
3.4Electrical Testing Capability (HTRB)Maximum Number of Dies to be tested in parallel for Drain Stress Test per waferAt least 700, more will be better ratedB8
3.5Electrical Testing Capability (HTRB)Voltage of DrainSource Voltage for Drain Stress TestAtleast 1200 V, more will be better ratedB8
3.6Electrical Testing CapabilityDUT protection and site isolation for short circuit protectionSystem shall provide over current and over voltage protection per site and describe the protection concept and electrical acceptable levels for protectionF
3.7Electrical Testing CapabilityMaximum Configurable I/O per wafer for testat least 900  I/O channels , more points to be awarded if more channels per waferB10
3.8Electrical Testing CapabilityMax Current per channelShould be able to handle atleast 1 Amp per channel, more will be better ratedB8
4.1Measurement RequirementsSupported Parameteric MeasurementsSystem must support static parametric measurements on wafer level such as VGS, BVDSS, IDSS, IGSS, VGSth, etc. Measurements before, during and after stress to be preferredF
4.2Measurement RequirementsPer Die MonitoringThe system must support per die monitoring to ensure there is no effect to neighbor die or the systemF
4.3Measurement RequirementsLeakage monitoringThe system must be able to monitor and measure leakage gate and drain currents with proper resolution and accuracyF
5.1Handling RequirementsWafer Contact TechnologyThe system shall provide a solution to contact all required pads of the devices and state the technology required in detail with contact type, interface, electrical and thermal limitsF
5.2Handling RequirementsUse of External Wafer ProberUse of an external prober instrument such as wafer prober should be clearly stated with all capabilities and aligned for information to integrate such a systemI
5.3Handling RequirementsContacts per waferThe system must be able to  handle atleast 30000 reliable contacts per wafer , more will be better ratedB10
6.1Software & DataData Traceability and Wafer Map IntegrationSystem must provide full data traceability of all stress and measurement data per die, per wafer and per lot and must support import and export of wafer maps.F
6.2Software & DataData ExportSystem shall be able to export result files in different data export formats such as CSV, STDF, etc.F
6.3Software & DataReporting and Analysis ToolsThe system shall be able to do integrated analysis and reporting with easy integration.F
6.4Software & DataRemote Monitoring and External ConnectivityOptional remote access and monitoring capabilities with equipment interfaces.F
7.1Installation RequirementsMain Power Supply230V or 400V AC, without transformerF
7.2Installation RequirementsPower Consumption during operationin kW, lower values rated betterN25
7.3Installation RequirementsPower ConsumptionStand byin kW, lower values rated betterN25
7.4Installation RequirementsCDA consumptionaverage flow in l/min, lower values rated betterN25
7.5Installation RequirementsCDA consumptionmaximal flow in l/min, lower values rated betterN25
7.6tool move inrequirements and restrictions for tool move insee Appendix 1F
8.1Additional RequirementsApplication support per e-mail or telephone must be includedYesF
8.2Additional RequirementsA complete training for at least 2 engineers for the programming/ usage of the software tools must be included.Yes, atleast 2 engineers, more points awarded for more engineersB2
8.3Additional RequirementsA complete training for at least 2 engineers for the operation/ usage of the system must be included.Yes, atleast 2 engineers, more points awarded for more engineersB2
8.4Additional RequirementsThe training location must be online or to be conducted onsite in GermanyYesF
8.5Additional RequirementsThe tool is shipped with a protocol conforming the electrical safety.YesF
8.6Additional RequirementsThe calibration can be done by the user. A manual for calibration and adjustment has to be included. Alternatively, the calibration is done by the vendor.YesF
8.7Additional RequirementsThe system should not have to be calibrated by external support more than once every six months.YesF
9.1Uptime/Repair/ReliabilityService on-site response time72h (Mo- Fr) shorter time rated betterB4
10.1ScheduleHardware Installationinformation about installation timeI
10.2ScheduleProcess start-up and Process acceptance testingI
11.1WarrantyA 12 month warranty should be offered. During the warranty period all support, repair and parts cost should be covered.YesF
12.1ServiceAfter expiration of warranty a service contract possibilityservice plan and information about costsI

Anhänge zum LV

Anhänge zum LV /Appendices to the LVUnnamed: 1Unnamed: 2
Banf-Nummer/order request no.:PR 1212932
Anzahl/quantity:1 Stück / 1 pieces
Gerätesteckbriefnummer/device profile no:ENAS-11-1-c
Auftragsgegenstand/order subject:Wafer Burn In Test
LV Pos. / TS Pos.TECHNISCHE BESCHREIBUNG - Hauptpunkt Technical description -  main topicAnhänge zum LV /Appendices to the LV
7.6tool move inAppendix 1

Appendix 1

This section only deals with local conditions. Supplier agreements or general transport regulations are regulated individually (e.g. access routes, possible division of packing components, weights, delivery contracts, order confirmations).
Delivery and material lock
The maximum dimensions and mass of the transport packaging are as follows in order to bring the packaging into the ENAS material lock and bring it to clean room level (freight elevator):
Dimensions of the heavy-duty elevator
Width: 2156 mm
Height: 2500 mm
Depth: 2755 mm
Mass: 4000 kg
Placing in the clean room
The transport packaging is broken down into smaller parts in the material lock.
The following maximum dimensions and masses apply when placing the system or components in the clean room:
Width: 1700 mm
Height: 2100mm
Mass: 2635 kg (with pallet truck)
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